C3M0032120K

C3M0032120K_Datasheet.pdf

PDF • 2.4 MB

Specifications

Drain-Source Voltage1200V
RDS(on)32mOhm
Continuous Drain Current68A
Gate Threshold Voltage2.5V
PackageTO-247-4
TechnologySilicon Carbide

Description

1200V SiC MOSFET, 32mOhm RDS(on), TO-247-4 package

Key Features

  • 1200V drain-source voltage
  • 32mOhm RDS(on)
  • High efficiency
  • Fast switching

C3M0032120K

CREE

$15.80/ unit

Tiered Pricing

1 - 9 units$15.80
10 - 99 units$14.20
100 - 9999+ units$12.50
In Stock: 1,890 units
Need bulk pricing? Request a Quote

Authentic Parts

Global Shipping

Datasheet Available

Related Products

TPS54331DR

TPS54331DR

Texas Instruments

3A, 28V input step-down DC-DC converter with integrated MOSFETs

SOIC-83.5V to 28V

From

$1.85

In Stock
LM7805CT

LM7805CT

Texas Instruments

3-terminal positive 5V voltage regulator, 1A output

TO-2207V to 35V

From

$0.45

In Stock
UCC28C45DR

UCC28C45DR

TI

BiCMOS high-speed current mode controller for DC-DC converters

SOIC-810V to 18V

From

$2.15

In Stock
粤ICP备2026161391号-1